Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• photoresponsivity can be the results of carrier multiplication in Ge-nps as suggested also by the analysis conducted by S. Saeed and co-workers [46]. The carrier multiplication can be a possible mechanism associated with excess electron injection induced by the holes trapped in Ge-nps to explain the observed

Carrier multiplication in silicon nanocrystals: ab initio results

• Ivan Marri,
• Marco Govoni and
• Stefano Ossicini

Beilstein J. Nanotechnol. 2015, 6, 343–352, doi:10.3762/bjnano.6.33

• of solar radiation and to minimize the loss factors. In this context, carrier multiplication seems one promising way to minimize the effects induced by thermalization loss processes thereby significantly increasing the solar cell power conversion. In this work we analyze and quantify different types

• of carrier multiplication decay dynamics by analyzing systems of isolated and coupled silicon nanocrystals. The effects on carrier multiplication dynamics by energy and charge transfer processes are also discussed. Keywords: carrier multiplication; nanocrystals; silicon; solar cells; Introduction

• conversion efficiency over the Shockley–Queisser (SQ) limit [6]. In this context, carrier multiplication (CM) can be exploited to maximize solar cell performance, promoting a net reduction of loss mechanisms. CM is a Coulomb-driven, recombination process that occurs when a highly excited carrier (excess